Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2506-2513

  Rahim, Ahmad Ismat Abdul ^a   Marsh, Chris D ^b   Ashburn, Peter ^a   Booker, G R ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Bipolar transistor; Cluster tool; In situ doped polysilicon; Polycrystalline silicon; Polysilicon; Polysilicon emitter

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); PHOSPHORUS; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMODYNAMIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

POLYSILICON EMITTER CONTACTS; THERMAL BUDGET;

BIPOLAR TRANSISTORS;

EID: 0035506806     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960375     Document Type: Article

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