A 30-GHz fT quasi-self-aligned single-poly bipolar technology

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 2091-2097

  De Pontcharra, Jean ^a   Behouche, Evelyne ^a   Ailloud, Laurence ^b   Thomas, Danielle ^c   Vendrame, Loris ^d   Gravier, Thierry ^d   Chantre, Alain ^d  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FREQUENCY MEASUREMENT; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STATISTICAL METHODS;

QUASI SELF ALIGNED (QSA) SINGLE POLYSILICON BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0031271027     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641389     Document Type: Article

References (16)

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