Single-wafer processing of in situ-doped polycrystalline Si and Si1-xGex

Solid State Technology

Volumn 41, Issue 3, 1998, Pages

  Bensahel, D ^a   Campidelli, Y ^a   Hernandez, C ^a   Martin, F ^a   Sagnes, I ^a   Meyer, D J ^b  

^a ORANGE LABS   (France)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BIPOLAR INTEGRATED CIRCUITS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

SINGLE WAFER PROCESSING;

SILICON WAFERS;

EID: 0032010458     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

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2. A.J. Learn, D.W. Foster, "Deposition and Electrical Properties of In Situ Pnosphorous-Doped Silicon Films by Low-pressure Chemical Vapor Deposition," J. Appl. Phys., Vol. 61, pp. 1898-1904, 1987.
3. W B. de Boer, D.J. Meyer, "Low-temperature Chemical Vapor Deposition of Epitaxial Si and SiGe Layers at Atmospheric Pressure," Appl. Phys. Lett., Vol. 58, pp. 1286-1288, 1991.
4. max Implanted Base 0.35-μm Single Polysilicon Bipolar Transistor," submitted to IEDM '97.
5. T. Skotnicki, "Advanced Architectures of 0.18 to 0.12 μm CMOS Generations," ESSDERC '96 Proceedings, pp. 506-514, eds. G. Baccarani, M. Duran, Bologna Italy, Editions Frontieres, 1996.
6. x Gate CMOS Technology," IEDM '90, pp. 253-256.
7. 6 on the Nucleation and Deposition of Polycrystalline SiGe Films," J. Electrochem. Soc., Vol. 141, pp. 2559-2563, 1994.
8. S. Bodnar, C. Morin, J.L. Regolini, "Single-wafer Si and SiGe Processes of Advanced ULSI Technologies," Thin Solid Films, Vol. 294, pp. 11-14, 1997.