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Volumn , Issue , 1986, Pages 32-35
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THERMIONIC-DIFFUSION MODEL OF POLYSILICON EMITTER.
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTOR MATERIALS - DOPING;
TRANSISTORS, BIPOLAR - COMPONENTS;
DRIFT-DIFFUSION;
PEAK DOPING CONCENTRATION;
POLYSILICON EMITTER THERMIONIC-DIFFUSION MODEL;
POLYSILICON-SILICON INTERFACE IMPURITY SEGREGATION;
THERMIONIC EMISSION;
SEMICONDUCTING SILICON;
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EID: 0023027253
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (44)
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References (6)
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