An investigation of polysilicon emitter bipolar transistors with an ozonized polysilicon/monosilicon interface

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 416-419

  Niel, S ^a   Hernandez, C ^a   Pantel, R ^a   Sagnes, I ^a   Berenguer, M ^a   Kirtsch, J ^a   Monroy, A ^a   Chantre, A ^a   Vincent, G ^b  

^a ORANGE LABS   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY;

DYNAMIC MEASUREMENT; INTERFACE PREPARATION; PHYSICAL CHARACTERIZATION; POLYSILICON EMITTER BIPOLAR TRANSISTORS;

POLYSILICON;

EID: 0342910492     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194454     Document Type: Conference Paper

References (5)

1. P. Ashburn, Design and realization of bipolar transistors, Ed. John Wiley & Sons (1988).
2. S. Niel et al., p.799 in Proc. ESSDERC'96, Ed Frontière, Gif-sur-yvette.
3. I. Sagnes et al. Mater. Res. Soc. Symp. Proc. 387, P.253 (1995).
4. M.E. Schrader & G.I. Loeb, Modern approach to wettability : theory and application , Ed. Plenum Press, New York (1992).
5. P. Llinares et al., these proceedings.