A commercially viable 193 nm single layer resist platform

Journal of Photopolymer Science and Technology

Volumn 10, Issue 3, 1997, Pages 511-520

  Houlihan, F M ^a   Wallow, T ^a,b   Timko, A ^a   Neria, E ^a,c   Hutton, R ^a   Cirelli, R ^a   Kometani, J M ^a   Nalamasu, O ^a   Reichmanis, E ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c EASTERN NEW MEXICO UNIVERSITY   (United States)

Author keywords

193 nm; Cycloolefins; Deep UV; Dissolution inhibition; Etch resistance; Maleic anhydride; Norbornene

Indexed keywords

EID: 0000449507     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.10.511     Document Type: Article

References (13)

1. Reiser A., "PhotoReactive Polymers The Science and Technology of Resists," Wiley Interscience New York, p 1 1989
2. Dammel R. "Diazonapthoquinone-based Resist, " D. Shea Editor, SPIE Optical Engineering Press, Bellingham Washington, pi 1993.
3. b) Diazonapthoquinone-based Resist ibid p 86.
4. Diazonapthoquinone-based Resist ibid p 70
5. Reichmanis E., Wilkins Jr CW, Chandross AE, J. Vac Sci Technol 19(4) 1338 (1981).
6. Wilkins Jr CW, Reichmanis E., Chandross AE, J. Electrochemical Soc. V129, No11, 2552(1982)
7. O'Brian MJ, Polym Eng Sci, 29, 846 (1989)
8. Crivello JV, Chem Mater Sci, 6 2167 (1994)
9. Allen RD, Wan IY, Wallraff GM, DiPetro RA, Hofer D, Kunz RR, J. Photopolymer Sci Technol. 8, 623(1995)
10. Wallow, TI, Houlihan F.M,. Nalamasu O., Chandross E.A., Neenan T, Reichmanis E. SPIE, 2724, 355 (1996)
11. Bonar-Law RP, Davis AP, Scanners JKM, J. Chem. Soc Perkin I, 2245 (1990)
12. Mirau P.A., Heffner S.A., Koegler G., Bovey F. Polymer International 26, 29 (1991).
13. Cirelli R., Weber G.R., Comblit A, Baker R.M., Clemens F.P., DeMarco J., Pai C.S., J. Vac. Sci. Technol. B, V 14 No 6, Nov/Dec, 4229 1996.