Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 1029-1034

  Maikap, S ^a   Bera, L K ^a   Ray, S K ^a   John, S ^b   Banerjee, S K ^c   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b TEXAS INSTRUMENTS   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MOS CAPACITORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

FOWLER-NORDHEIM CONSTANT CURRENT STRESSING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033727705     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00327-5     Document Type: Article

References (38)

1. Nayak D.K., Woo J.C.S., Park J.S., Wang K.L., MacWilliams K.P. IEEE Electron Dev Lett. EDL-12:1991;154.
2. Verdonckt-Vandebroek S, Crabbe F, Meyerson BS, Harame DL, Restle PJ, Stork JMC, Johnson JB. IEEE Trans Electron Dev 1994;41:90.
3. Konig U., Daembkes H. Solid State Electron. 38:1995;1595.
4. People R. IEEE J Quantum Elec. QE-22:1986;1696.
5. Van de Walle C.G., Martin R.M. Phys Rev B. 34:1986;5621.
6. People R., Bean J.C. Appl Phys Lett. 48:1986;538.
7. Hohenberg P., Kohn W. Phys Rev B. 136:1964;864.
8. van de Walle C.G., Martin R.M. J Vac Sci Technol B. 53:1985;1256.
9. Ni W.X., Hansson G.V. Phys Rev B. 42:1990;3030.
10. Takagi S., Hoyt J.L., Rim K., Welser J.J., Gibbons J.F. IEEE Trans Electron Dev. 45:1998;494.
11. Vescan L., Apetz R., Luth H. J Appl Phys. 73:1993;7427.
12. Brighten J.C., Hawkins I.D., Peaker A.R., Parker E.H.C., Whall T.E. J Appl Phys. 74:1993;1894.
13. Voinigescu S.P., Iniewski K., Lisak R., Salama C.A.T., Noel J.P., Houghton D.C. Solid State Electron. 37:1994;1491.
14. Chretien O., Apetz R., Soufi A., Vescan L. Thin Soild Films. 294:1997;198.
15. Liou K.K., Mei P., Gennser U., Yang E.S. Appl Phys Lett. 59:1991;1200.
16. Eugene J., LeGoues F.K., Kesan V.P., Iyer S.S., d'Heurle F.M. Appl Phys Lett. 59:1991;78.
17. Iyer S.S., Solomon P.M., Kesan V.P., Bright A.A., Freeouf J.L., Nguyen T.N., Warren A.C. IEEE Electron Dev Lett. EDL-12:1991;246.
18. Mukhopadhyay M., Ray S.K., Nayak D.K., Maiti C.K. Appl Phys Lett. 68:1996;1262.
19. Li P.W., Liou H.K., Yang E.S., Iyer S.S., Smith T.P., Lu Z. Appl Phys Lett. 60:1992;3265.
20. Goh I.S., Zhang J.F., Hall S., Eccleston W., Werner K. Semicond Sci Technol. 10:1995;818.
21. Mukhopadhyay M., Ray S.K., Maiti C.K., Nayak D.K., Shiraki Y. Appl Phys Lett. 65:1994;895.
22. Mukhopadhyay M., Ray S.K., Maiti C.K., Nayak D.K., Shiraki Y. Appl Phys Lett. 66(12):1995;1566.
23. Mukhopadhyay M., Ray S.K., Maiti C.K., Nayak D.K., Shiraki Y. J Appl Phys. 75:1995;6135.
24. Li P.W., Yang E.S., yang Y.F., Chu J.O., Meyerson B.S. IEEE Electron Dev Lett. 15:1994;402.
25. Maikap S., Bera L.K., Ray S.K., Maiti C.K. Electronics Lett. 35:1999;1202.
26. Ray S.K., Maiti C.K., Lahiri S.K., Chakrabarti N.B. J Vac Sci Technol B. 10:1992;1139.
27. Sah C.T. Solid State Electron. 33:1990;147.
28. Garone P.M., Venkataraman V., Sturm J.C. IEEE Electron Dev Lett. 12:1991;230.
29. Bhaumik K., Shachamiamand S. Solid State Electron. 36:1993;961.
30. Yousif M.Y.A., Chretien O., Nur O., Willander M. Solid State Electron. 43:1999;969.
31. Iniewski K., Voinigescu S., Atcha J., Salama C.A.T. Solid State Electron. 36:1993;775.
32. Bera L.K., Ray S.K., Nayak D.K., Usami N., Shiraki Y., Maiti C.K. J Electron Mater. 28:1999;98.
33. Gan C.H., del Alamo J.A., Bennett B.R., Meyerson B.S., Crabbe E.F., Sodini C.G., Reif L.R. IEEE Trans Electron Dev. 41:1994;2430.
34. Ni W.X., Knall J., Hansoon G.V. Phys Rev B. 36:1987;7744.
35. Wang P.J., Fang F.F., Meyerson B.S., Nocera J., Parker B. Appl Phys Lett. 54:1989;2701.
36. Iyer S.S., Patton G.L., Stork J.M.C., Meyerson B.S., Harame D.L. IEEE Trans Electron Dev. ED-36:1989;2043.
37. King C.A., Hoyt J.L., Gibbons J.F. IEEE Trans Electron Dev. 36:1989;2093.
38. Nauka K., Kamins T.I., Turner J.E., King C.A., Hoyt J.L., Gibbons J.F. Appl Phys Lett. 60:1992;195.