Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs

Solid-State Electronics

Volumn 43, Issue 12, 1999, Pages 2173-2180

  Collaert, N ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTING GERMANIUM; THERMIONIC EMISSION;

MOLEFRACTION;

MOSFET DEVICES;

EID: 0033285215     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00185-9     Document Type: Article

References (12)

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