Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1245-1249

  Ouyang, Q C ^a   Chen, X ^a   Tasch Al F , Jr ^a   Register, L F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Band gap engineering; Built in electric field; Drift and diffusion; Graded SiGe channel; SiGe MOSFETs; Vertical MOSFETs

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS;

DRAIN CURRENTS;

MOSFET DEVICES;

EID: 0035368012     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925255     Document Type: Article

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