Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics

Materials Science in Semiconductor Processing

Volumn 4, Issue 4, 2001, Pages 383-391

  Ariel, N ^a   Eizenberg, M ^a   Wang, Y ^b   Murarka, S P ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS CARBON FILMS;

AMORPHOUS FILMS;

EID: 0035427691     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00096-2     Document Type: Article

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