Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer

Materials Research Society Symposium - Proceedings

Volumn 511, Issue , 1998, Pages 291-296

  Matsubara, Y ^a   Endo, K ^a   Iguchi, M ^a   Ito, N ^a   Aoyama, K ^a   Tatsumi, T ^a   Horiuchi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CAPACITANCE; COPPER; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FLUOROCARBONS; LEAKAGE CURRENTS; LITHOGRAPHY; OXIDATION; PERMITTIVITY;

COPPER DAMASCENE; FLUORINATED AMORPHOUS CARBON; LOW DIELECTRIC CONSTANT; MULTILEVEL INTERCONNECT TECHNOLOGY;

MICROELECTRONIC PROCESSING;

EID: 0032293294     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-511-291     Document Type: Conference Paper

References (14)