Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2763-2767

  Benabbas, T ^a   Francois P ^a   Androussi, Y ^a   Lefebvre, A ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001227837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363193     Document Type: Article

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