Growth and characterizations of AlGaN/GaN heterostructures using multi-AlN buffer layers in plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 447-452

  Shen, X Q ^a   Ide, T ^a   Cho, S H ^a   Shimizu, M ^a   Okumura, H ^a   Sonoda, S ^b   Shimizu, S ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b ULVAC INC   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Alloys; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRACK PROPAGATION; DISLOCATIONS (CRYSTALS); ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS;

EID: 0035398122     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00741-2     Document Type: Conference Paper

References (18)