Electron mobility exceeding 104 cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3531-3533

  Wang, T ^a   Ohno, Y ^b   Lachab, M ^a   Nakagawa, D ^a   Shirahama, T ^a   Sakai, S ^a   Ohno, H ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SHUBNIKOV-DE HAAS EFFECT; SUBSTRATES;

PARABOLIC MAGNETIC FIELD DEPENDENCE;

HETEROJUNCTIONS;

EID: 0032606388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124151     Document Type: Article

References (8)

1. M. A. Khan, J. N. Kuznia, J. M. Van Hove, N. Pan, and J. Carter, Appl. Phys. Lett. 60, 3027 (1992).
2. M. A. Khan, Q. Chen, C. J. Sun, M. Shur, and B. Gelmont, Appl. Phys. Lett. 67, 1429 (1995).
3. J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, W. C. Mitchel, and W. Mitchel, Appl. Phys. Lett. 69, 963 (1996).
4. R. Gaska, M. S. Shur, A. D. Bykhovski, A. O. Orlov, and G. L. Sneider, Appl. Phys. Lett. 74, 287 (1999).
5. L. Hsu and W. Walukiewicz, Appl. Phys. Lett. 73, 339 (1998).
6. R. Oberhuber, G. Zandler, and P. Vogl, Appl. Phys. Lett. 73, 818 (1998).
7. N. Maeda, T. Nishida, N. Kobayahi, and M. Tomizawa, Appl. Phys. Lett. 73, 1856 (1998).
8. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).