Minority carrier lifetime measurement in epitaxial silicon layers

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages

  Hara, Tohru ^a,b   Tamura, Fumio ^b   Kitamura, Taira ^b  

^a ELECTROCHEMICAL SOCIETY   (Japan)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SUBSTRATES;

CARRIER RECOMBINATION; EPITAXIAL SILICON LAYERS; MINORITY CARRIER LIFETIME;

SILICON WAFERS;

EID: 0031117612     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837551     Document Type: Article

References (6)

1. T. Kitamura, F. Tamura, T. Hara, M. Hourai, and H. Tsuya, in High Purity Silicon IV, C. L. Claeys, P. Rai-Choudhury, P. Stallhofer, and J. E. Maurits, Editors, PV 96-13, p. 533, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
2. T. Hara and F. Tamura, Extended Abstract of the 43rd Spring Meeting, 1996, The Japan Scoety of Applied Physics, 28-a-P-8.
3. G. Ferenczi, T. Pavelka, and P. Tüttö, Jpn. J. Appl. Phys., 30, 12B, 3630 (1991).
4. T. S. Horányi, T. Pavelka, and P. Tüttö, Appl. Surf. Sci., 63, 306 (1993).
5. T. Hara, F. Tamura, T. Ueyama, Y. Lida, and K. Kitagawa, Abstract 408, p. 628, The Electrochemical Society Meeting Abstracts, Miami Beach, FL, Oct. 9-14, 1994.
6. M. Ichimura, Private communication.