Monitoring PSG plasma damage with COS

Semiconductor International

Volumn 20, Issue 8, 1997, Pages 211-218

  Fung, Min Su ^a  

^a MiCRUS   (United States)

Author keywords

Corona oxide semiconductor; Phosphosilicate glass; Plasma damage

Indexed keywords

ELECTRIC CHARGE MEASUREMENT; OXIDES; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; VLSI CIRCUITS;

CORONA OXIDE SEMICONDUCTOR; INTERFACE TRAP DENSITY; PHOSPHOSILICATE GLASS; PLASMA DAMAGE;

SEMICONDUCTOR PLASMAS;

EID: 0031188493     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. James P. McVittie, "Damage, Measurement and Topography Modeling," Plasma Etch Seminar, SEMI Technical Education Program, SEMICON/West '95, 1995.
2. Stanley Wolf, Silicon Processing for the VLSI Era, Vol.3: The Sub-Micron MOSFET, Chapter 7, Lattice Press, 1995.
3. R. L. Verkuil, M. S. Fung, "A Contactless Alternative to MOS Charge Measurement by Means of a Corona-Oxide-Semiconductor (COS) Technique", Abs. No. 169, Ext. Abs., V. 88-1, Electrochemical Society 173rd Meeting, 1988.