Contactless measurement of the Si - Buried oxide interfacial charges in SOI wafers with surface photovoltage technique

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 351-357

  Nauka, K ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; ELECTRIC CHARGE MEASUREMENT; IMAGING TECHNIQUES; INTERFACES (MATERIALS); ION IMPLANTATION; OXYGEN; PHOTOELECTRICITY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; CARRIER CONCENTRATION; GLASS BONDING; SUBSTRATES; THERMAL CYCLING;

BURIED OXIDE (BOX); CONTACTLESS MEASUREMENT; SURFACE PHOTOVOLTAGE TECHNIQUE; WAFER BONDING; BURIED OXIDE INTERFACIAL CHARGES;

MOS DEVICES; SILICON ON INSULATOR TECHNOLOGY;

EID: 0031150270     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00078-6     Document Type: Article

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