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Volumn 42, Issue 4, 1999, Pages 67-74

Fast noncontact diffusion-process monitoring

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002778510     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (12)

References (8)
  • 1
    • 0012204088 scopus 로고    scopus 로고
    • Monitoring Plasma Damage: A Real-time, Noncontact Approach
    • July
    • A.M. Hoff, T.C. Esry, K. Nauka, "Monitoring Plasma Damage: A Real-time, Noncontact Approach," Solid State Technology, Vol. 7, pp. 139-152, July 1996.
    • (1996) Solid State Technology , vol.7 , pp. 139-152
    • Hoff, A.M.1    Esry, T.C.2    Nauka, K.3
  • 2
    • 0032404721 scopus 로고    scopus 로고
    • 2 Interface Defects Induced by Plasma Processing
    • part of the SPIE Conference on In-Line Characterization Techniques for Performance and Yield Enhancements in Microelectronic Manufacturing II, Santa Clara, CA, September 1998
    • 2 Interface Defects Induced by Plasma Processing," part of the SPIE Conference on In-Line Characterization Techniques for Performance and Yield Enhancements in Microelectronic Manufacturing II, Santa Clara, CA, September 1998, Proc., SPIE, Vol. 3509, pp. 126-136, 1998.
    • (1998) Proc., SPIE , vol.3509 , pp. 126-136
    • Edelman, P.1
  • 3
    • 21544455719 scopus 로고
    • Iron Detection in the Parts Per Quadrillion Range in Silicon Using Surface Photovoltage and Photo-dissociation of Iron-Boron Pairs
    • J. Lagowski et al., "Iron Detection in the Parts Per Quadrillion Range in Silicon Using Surface Photovoltage and Photo-dissociation of Iron-Boron Pairs," Appl. Phys. Lett., Vol. 63, pp. 3043-3045, 1993.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3043-3045
    • Lagowski, J.1
  • 5
    • 84866797262 scopus 로고    scopus 로고
    • "Measurement of the Mobile Ion Concentration in the Oxide Layer of a Semiconductor Wafer," United States Letters Patent, 1998, Patent No. 5,773,989
    • P. Edelman et al., "Measurement of the Mobile Ion Concentration in the Oxide Layer of a Semiconductor Wafer," United States Letters Patent, 1998, Patent No. 5,773,989.
    • Edelman, P.1
  • 6
    • 18944379325 scopus 로고    scopus 로고
    • Mobile Charge Testing of Sodium Contaminated Thermal Oxides Using Corona Temperature Stressing
    • presented at Optical Characterization Techniques for High-Performance Microelectronic Manufacturing, October 1997, Austin, TX
    • A.M. Hoff, D.K. DeBusk, "Mobile Charge Testing of Sodium Contaminated Thermal Oxides Using Corona Temperature Stressing," presented at Optical Characterization Techniques for High-Performance Microelectronic Manufacturing, October 1997, Austin, TX, Proc., SPIE, Vol. 3215, pp. 26-34, 1997.
    • (1997) Proc., SPIE , vol.3215 , pp. 26-34
    • Hoff, A.M.1    DeBusk, D.K.2
  • 7
    • 0002956969 scopus 로고
    • Surface Photovoltage Monitoring of Heavy Metal Contamination in IC Manufacturing
    • December
    • L. Jastrzebski, W. Henley, C. Neuse, "Surface Photovoltage Monitoring of Heavy Metal Contamination in IC Manufacturing," Solid State Technology, Vol. 35, p. 27-36, December 1992.
    • (1992) Solid State Technology , vol.35 , pp. 27-36
    • Jastrzebski, L.1    Henley, W.2    Neuse, C.3
  • 8
    • 84938437671 scopus 로고
    • The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
    • B.E. Deal, "The Current Understanding of Charges in the Thermally Oxidized Silicon Structure," J. Electrochem. Soc., Vol. 121, 198C-207C, 1974.
    • (1974) J. Electrochem. Soc. , vol.121
    • Deal, B.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.