Present status of the surface photovoltage method (SPV) for measuring minority carrier diffusion length and related parameters

ASTM Special Technical Publication

Volumn , Issue 1340, 1998, Pages 125-146

  Lagowski, Jacek ^a   Edelman, Piotr ^a   Faifer, Vladimir ^a  

^a Semiconductor Diagnostics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DIFFUSION; ELECTRON TRAPS; IRON; SURFACES; VOLTAGE MEASUREMENT;

IRON CONCENTRATION; MINORITY CARRIER DIFFUSION LENGTH; RECOMBINATION CENTER DEFECTS; RECOMBINATION LIFETIME; SURFACE PHOTOVOLTAGE METHOD;

SILICON WAFERS;

EID: 13044262568     PISSN: 10403094     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1520/stp15700s     Document Type: Article

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