Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 3014-3019

  Rotondar, A L P ^a,b,c   Hurd, T Q ^a,b,c,d   Kaniava, A ^a,e   Vanhellemont, J ^a   Simoen, E ^a,c   Heyns, M M ^a   Claeys, C ^a,c   Brown, G ^b,c  

^a Imec   (Belgium)

^b TEXAS INSTRUMENTS   (United States)

^c ELECTROCHEMICAL SOCIETY

^d Vilnius University ^*

^e VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CONTAMINATION; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); IRON; SUBSTRATES; ULSI CIRCUITS;

METALLIC CONTAMINATION; MICROWAVE PHOTOCONDUCTANCE DECAY; MINORITY CARRIER LIFETIME; SURFACE PHOTOVOLTAGE;

SILICON WAFERS;

EID: 0030246541     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837141     Document Type: Article

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