Measurement of carrier lifetime: monitoring epitaxy quality

Solid State Technology

Volumn 43, Issue 6, 2000, Pages 143-144,-146

  Renaud, Philippe ^a   Walker, Ariel ^b  

^a MOTOROLA INC   (United States)

^b National Engineering School   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEFECTS; DEPOSITION; EPITAXIAL GROWTH; FAILURE ANALYSIS; INSPECTION; OXIDES; QUALITY CONTROL; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CARRIER RECOMBINATION; CORONA OXIDE SEMICONDUCTOR METHOD; EPITAXIAL LAYERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0343878216     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (3)

1. KLA-Tencor, Quantox oxide charge-monitoring system.
2. D.K. Schroder, "Corona-Oxide-Semiconductor Device Characterization," Solid-State Electronics, Vol. 42, No. 4, pp. 505-512, 1998.
3. S.K. Pang, A. Rohatgi, "Record High Recombination Lifetime in Oxidized Magnetic Czochralski Silicon," Appl. Phys. Lett., 59, pp. 195-197, July 1991.