3-watt AlGaN/GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 118-119

  Wu, Y F ^a   Thibeault, B J ^a   Keller, B P ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ENERGY GAP; FLIP CHIP DEVICES; GATES (TRANSISTOR); HETEROJUNCTIONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

FLIP CHIP BONDING; GALLIUM NITRIDE; THERMAL MANAGEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032312634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)