Simulation of NPN and PNP AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 427-432

  Monier, Cédric ^a,b,c   Ren, Fan ^a,c   Han, Jung ^b,c   Chang, Ping Chih ^b   Shul, Randy J ^b   Lee, K P ^a   Zhang, Anping ^a   Baca, Albert G ^b,c   Pearton, Stephen ^a,c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c IEEE   (United States)

Author keywords

AlGaN GaN HBT; Base resistivity; DC current gain; High frequency characteristics; Mg ionization efficiency; Quasi electric field; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; GAIN MEASUREMENT; GALLIUM NITRIDE; IONIZATION; MAGNESIUM PRINTING PLATES; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BASE RESISTANCE; BASE TRANSPORT ENHANCEMENT; CURRENT GAIN VALUES; DEEP ACCEPTOR LEVEL; DRIFT-DIFFUSION TRANSPORT MODEL; IONIZATION EFFICIENCY; LIMITING FACTORS; QUASIELECTRIC FIELD;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035278803     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906431     Document Type: Article

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