DC and high-frequency performance of AlGaN/GaN heterojunction bipolar transistors

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 245-252

  Alekseev, Egor ^a   Pavlidis, Dimitris ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FREQUENCIES; GAIN MEASUREMENT; NITRIDES; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

DC CURRENT GAIN; DRIFT DIFFUSION MODEL; IDEALITY FACTORS; OSCILLATION FREQUENCY; SOFTWARE PACKAGE MEDICI; TURN ON VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034140005     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00230-0     Document Type: Article

References (19)

1. Johnson E.O. Physical limitations on frequency and power parameters of transistors. RCA Review. 26:1965;163-177.
2. Baliga B.J. Power semiconductor device figure of merit of high-frequency applications. Electron Device Letters. 10:1989;455-457.
3. Sheppard T.S., et al. High power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates. IEEE Electron Devices Letters. 20:(4):1999;161-163.
4. Mishra U.K., Wu Y.-F., Keller B.P., Keller S., Denbaars S.P. GaN microwave electronics. IEEE Transactions on Microwave Theory and Techniques. 6:1998;756-761.
5. Daumiller I, Kirchner C, Kamp M, Ebeling KJ,.Pond L, Weitzel DE, Kohn E. Evaluation of AlGaN/GaN HFETs up to 750°C. Device Research Conference Digest, 1998:114-115.
6. News Briefs in Compound Semiconductor. January/February 1999;5(1):11.
7. Gao G.-B. Material-based comparison for power heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 38:(11):1991;2410-2416.
8. Mccarthy L., Kozodoy P., Rodwell M., Denbaars S., Mishra U. A first look at AlGaN/GaN HBTs. Compound Semiconductor. 1:(11):1998;16-18.
9. Pavlidis D, Alekseev E, Eisenbach A, Daniels A. DC and high-frequency characteristics of GaN-based heterojunction bipolar transistors. Proceedings of the Workshop on Widebandgap Bipolar Devices. Panama City Beach, FL, January 25-28, Paper 5, Session 2.
10. Mohammad S.N., Morcoç H. Progress and prospects of group-III nitride semiconductors. Progress in Quantum Electronics. 20:(5/6):1996;361-525.
11. Krishnamurthy S., Schilfgaarde M., Sher A., Chen A.-B. Bandstructure effect on high-field transport in GaN and GaAlN. Applied Physics Letters. 71:(14):1997;1999-2001.
12. Bandic Z.Z., Bridger P.M., Piquette E.C., Beach R.A., Phasnse V.M., Vaudo R.P., Redwing J., Mcgill T.C. Nitride based high power devices: transport properties, linear defects, and goals. MRS Symposium Proceedings. 512:1998;27-32.
13. Kolnik J., Oguzman I.H., Brennan K.F., Wang R., Ruden P.P. Monte Carlo calculation of electron initiated impact ionization in bulk zinc blende and wurtzite GaN. Journal of Applied Physics. 81:(12):1997;727-733.
14. Dmitriev V.A., Kuznetsov N.I., Irvine K.G., Carter C.H. Jr. Electric breakdown in nitride PN junctions. MRS Symposium Proceedings. 395:1996;909-912.
15. Binari S.C., Doverspike K., Kelner G., Dietrich H.B., Wickenden A.E. GaN FETs for microwave and high-temperature applications. Solid-State Electronics. 41:(2):1997;177-180.
16. Binari S.C., Kruppa W., Dietrich H.B., Kelner G., Wickenden A.E., Freitas J.A. Jr. Fabrication and characterization of GaN FETs. Solid-State Electronics. 41:(10):1997;1549-1553.
17. Medici, two-dimensional device simulation program, version 2.3, user's manual. Technology Modeling Associates, CA, February 1997.
18. Shur M. GaAs devices and circuits. 1987;591 Plenum Press, New York.
19. Sze S.M. High-speed semiconductor devices. 1990;341-342 Wiley, New York.