Nonlinear electronic transport and device performance of HEMTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 210-217

  Quay, Ruediger ^a   Hess, Karl ^b   Reuter, Ralf ^c   Schlechtweg, M ^a   Grave, Thomas ^d   Palankovski, Vassil ^e   Selberherr, Siegfried ^e  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Motorola GmbH   (Germany)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

NONLINEAR ELECTRONIC TRANSPORT; REAL SPACE TRANSFER (RST);

COMPUTER SIMULATION; ELECTRON DEVICES; ELECTRON EMISSION; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMIONIC EMISSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035250274     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902718     Document Type: Article

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