Temperature Dependence Study of Two-Dimensional Electron Gas Effect on the Noise Performance of High Frequency Field Effect Transistors

IEEE Electron Device Letters

Volumn 16, Issue 4, 1995, Pages 139-141

  Feng, M ^a   Scherrer, D ^a   Kruse, J ^a   Apostolakis, P J ^a   Middleton, J R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

HIGH FREQUENCY FIELD EFFECT TRANSISTORS; NOISE FIGURE; TEMPERATURE DEPENDENCE; TWO DIMENSIONAL ELECTRON GAS EFFECT;

FIELD EFFECT TRANSISTORS;

EID: 0029293517     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.372494     Document Type: Article

References (9)

1. R. Dingle, H. L. Stomer, A. G. Gossard, and W. Wiegmann, “Electron mobility's in modulated-doped semiconductor heterojunction superlattices,” Appl. Phys. Lett., vol. 33, p. 1088, 1988.
2. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, “A new field effect transistor with selective doped GaAs/AlGaAs heterojunction,” Japan J. Appl. Phys., vol. 19, p. L255, 1980.
3. M. Feng, C. L. Lau, V. Eu, and C. Ito, “Does two-dimensional electron gas effect contribute to high frequency and high speed device performances?” Appl. Phys. Lett., vol. 57, pp. 1233–1235, 1990.
4. J. Laskar, S. Maranoski, S. Caracci, M. Feng, and J. Kolodzey, “Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs FET's,” Appl. Phys. Lett., vol. 59, no. 19, pp. 2412–2414, 1991.
5. T. Mizutani and K. Maezawa, “Temperature dependence of high frequency performance of AlGaAs/InGaAs pseudomorphic HEMT's,” IEEE Electron Devices Lett., vol. 13, pp. 8–10, 1992.
6. C. L. Lau, M. Feng, T. R. Lepkowski, G. W. Wang, Y. Chang, and C. Ito, “Half-micron gate length ion-implanted GaAs MESFET with 0.8 dB noise figure at 16 GHz,” IEEE Electron Device Lett., vol. 10, pp. 409–411, 1989.
7. K. Hosogi, N. Ayaki, T. Kato, T. Oku, Y. Kohno, H. Nakano, T. Shimura, H. Takano, and K. Nishitani, “Super low noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz,” IEEE MTT-S Dig., p. 1257, 1990.
8. K. Onodera, K. Nishimura, S. Sugitani, and K. Asai, “Ultra-low-noise fully ion implanted GaAs MESFET with Au/WSiN refractory metal gate,” IEDM Tech. Dig., pp. 962–964, 1991.
9. P. C. Chao et al., “DC and microwave characteristics of sub-0.1 µm AlGaAs/InGaAs pseudomorphic MODFET's,” IEEE Trans. Electron Devices. vol. 35, p. 879, 1988.