An ultra low noise W-band monolithic three-stage amplifier using 0.1-μm pseudomorphic InGaAs/GaAs HEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1992, Pages 803-806

  Wang, H ^a   Ton, T N ^a   Tan, K L ^a   Dow, G S ^a   Chen, T H ^a   Chang, K W ^a   Berenz, J ^a   Allen, B ^a   Liu, P ^a   Streit, D ^a   Hayashibara, G ^a   Liu, L C T ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; HIGH ELECTRON MOBILITY TRANSISTORS; MICROELECTRONICS; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

HEMT DEVICES; LOW NOISE AMPLIFIERS; MILLIMETER WAVE AMPLIFIERS; MONOLITHIC AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0027047017     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)