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Applied Physics Letters

Volumn 57, Issue 12, 1990, Pages 1233-1235

Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?

(4) Feng, M a Lau, C L a Eu, V a Ito, C a

a Ford Microelectronics Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549100926 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.103494 Document Type: Article

Times cited : (33)

References (13)

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