Optimization of pseudomorphic HEMT's supported by numerical simulations

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1822-1828

  Brech, Helmut ^a,b   Grave, Thomas ^a   Simlinger, Thomas ^a   Selberherr, Siegfried ^a  

^a SIEMENS AG   (Germany)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

BIAS DEPENDENT CURRENT GAIN CUTOFF FREQUENCY; GENERIC DEVICE SIMULATOR; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031276313     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641348     Document Type: Article

References (11)

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