PULSE-DOPED ALGAAS/INGAAS PSEUDOMORPHIC MODFET'S.

IEEE Transactions on Electron Devices

Volumn ED-34, Issue 11, 1987, Pages

  Moll, Nick ^a   Fischer Colbrie, Alice ^a   Hueschen, Mark ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - SUBSTRATES; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS; SEMICONDUCTOR DEVICES, FIELD EFFECT - DOPING;

2-D ELECTRON GAS DENSITY; PSEUDOMORPHIC MODFETS; PULSE DOPING; SUMMARY FORM ONLY;

TRANSISTORS, FIELD EFFECT;

EID: 0023457094     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)