Determination of the Electron Saturation Velocity in Pseudomorphic AlxGa1_ xAs/InyGai_ y As MODFET's at 300 and 100 K

IEEE Transactions on Electron Devices

Volumn 36, Issue 10, 1989, Pages 2315-2319

  Dickmann, Jurgen ^a   Heedt, Christian H ^a   Daembkes, Heinrich ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; SEMICONDUCTING GALLIUM ARSENIDE;

CRYOGENIC ELECTRONICS; ELECTRON SATURATION VELOCITY; MODFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0024750172     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40916     Document Type: Article

References (10)

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