In situ study of Fermi-level pinning on n- and p-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance

Physical Review B

Volumn 52, Issue 7, 1995, Pages 4674-4676

  Yan, D ^a   Pollak, Fred H ^a   Chin, T P ^b   Woodall, J M ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243333497     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.52.4674     Document Type: Article

References (15)

1. The Continuing Drama of the Semiconductor Interface
2. Surface influence on the conductance DLTS spectra of GaAs MESFET's
3. Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
4. Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures
5. GaAs, AlAs, and AlxGa1−xAs Material parameters for use in research and device applications