1510 mS/mm 0.1 μm gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz

Electronics Letters

Volumn 32, Issue 9, 1996, Pages 848-850

  Diette, F ^a   Langrez, D ^a   Codron, J L ^a   Delos, E ^a   Theron, D ^a   Salmer, G ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE;

INTRINSIC CURRENT GAIN CUTOFF FREQUENCY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030123055     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960516     Document Type: Article

References (9)