Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part II: Submicrometer MOSFET's

IEEE Transactions on Electron Devices

Volumn 38, Issue 3, 1991, Pages 650-660

  Fischetti, Massimo V ^a   Laux, Steven E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

BRILLOUIN ZONE; CARRIER HEATING; EFFECTIVE MASS; MONTE CARLO SIMULATION; SUBMICROMETER MOSFET; VELOCITY OVERSHOOT;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026121721     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75177     Document Type: Article

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