메뉴 건너뛰기




Volumn 48, Issue 2, 2001, Pages 231-238

Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HOLE TRAPS; INDUCED CURRENTS; LOGIC GATES; SUBSTRATES; THIN FILMS;

EID: 0035249861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902721     Document Type: Article
Times cited : (15)

References (27)
  • 7
    • 0001243076 scopus 로고    scopus 로고
    • Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode
    • M. V. FischettiModel for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anodePhys. Rev. B, vol. 31, pp. 2099-2113, Feb. 1985.
    • Phys. Rev. B, Vol. 31, Pp. 2099-2113, Feb. 1985.
    • Fischetti, M.V.1
  • 8
    • 0033314086 scopus 로고    scopus 로고
    • An anode hole injection percolation model for oxide breakdown the dooms day scenario revisited
    • M. A. Alam et al.An anode hole injection percolation model for oxide breakdown the dooms day scenario revisitedin IEDM Tech. Dig., 1999, pp. 715-718.
    • In IEDM Tech. Dig., 1999, Pp. 715-718.
    • Alam, M.A.1
  • 11
    • 0027851235 scopus 로고    scopus 로고
    • Substrate hole current generation and oxide breakdown in Si MOSFET' s under Fowler-Nordheim electron tunneling injection
    • H. Satake and A. ToriumiSubstrate hole current generation and oxide breakdown in Si MOSFET' s under Fowler-Nordheim electron tunneling injectionin IEDM Tech. Dig., 1993, pp. 337-340.
    • In IEDM Tech. Dig., 1993, Pp. 337-340.
    • Satake, H.1    Toriumi, A.2
  • 15
    • 36449003773 scopus 로고    scopus 로고
    • Model for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel met al.oxide-semiconductor field-effect transistors
    • K. Kobayashi, A. Teramoto, M. Hirayama, and Y. FujitaModel for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel met al.oxide-semiconductor field-effect transistors,/ Appl. Phys., vol. 77, pp. 3277-3282, Apr. 1995.
    • Appl. Phys., Vol. 77, Pp. 3277-3282, Apr. 1995.
    • Kobayashi, K.1    Teramoto, A.2    Hirayama, M.3    Fujita, Y.4
  • 16
    • 0033185336 scopus 로고    scopus 로고
    • Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in mos structures under high-field stress
    • P. SamantaCalculation of the probability of hole injection from polysilicon gate into silicon dioxide in mos structures under high-field stressSolid-State Electron., vol. 43, pp. 1677-1687, Sept. 1999.
    • Solid-State Electron., Vol. 43, Pp. 1677-1687, Sept. 1999.
    • Samanta, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.