-
4
-
-
0000814330
-
Anode hole injection and trapping in silicon dioxide
-
D. J. DiMaria, E. Cartier, and D. A. BuchananAnode hole injection and trapping in silicon dioxideJ. Appl. Phys., vol. 80, pp. 304-317, July 1996.
-
J. Appl. Phys., Vol. 80, Pp. 304-317, July 1996.
-
-
Dimaria, D.J.1
Cartier, E.2
Buchanan, D.A.3
-
5
-
-
0000635723
-
Theory of high-field transport and impact ionization in silicon dioxide
-
N. D. Arnold, E. Cartier, and D. J. DiMariaTheory of high-field transport and impact ionization in silicon dioxidePhys. Rev. B, vol. 49, pp. 10278-10297, Apr. 1994.
-
Phys. Rev. B, Vol. 49, Pp. 10278-10297, Apr. 1994.
-
-
Arnold, N.D.1
Cartier, E.2
Dimaria, D.J.3
-
7
-
-
0001243076
-
Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode
-
M. V. FischettiModel for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anodePhys. Rev. B, vol. 31, pp. 2099-2113, Feb. 1985.
-
Phys. Rev. B, Vol. 31, Pp. 2099-2113, Feb. 1985.
-
-
Fischetti, M.V.1
-
8
-
-
0033314086
-
An anode hole injection percolation model for oxide breakdown the dooms day scenario revisited
-
M. A. Alam et al.An anode hole injection percolation model for oxide breakdown the dooms day scenario revisitedin IEDM Tech. Dig., 1999, pp. 715-718.
-
In IEDM Tech. Dig., 1999, Pp. 715-718.
-
-
Alam, M.A.1
-
11
-
-
0027851235
-
Substrate hole current generation and oxide breakdown in Si MOSFET' s under Fowler-Nordheim electron tunneling injection
-
H. Satake and A. ToriumiSubstrate hole current generation and oxide breakdown in Si MOSFET' s under Fowler-Nordheim electron tunneling injectionin IEDM Tech. Dig., 1993, pp. 337-340.
-
In IEDM Tech. Dig., 1993, Pp. 337-340.
-
-
Satake, H.1
Toriumi, A.2
-
13
-
-
0001421578
-
Quantum yield of electron impact ionization in silicon
-
C. Chang, C. Hu, and R. W. BrodersenQuantum yield of electron impact ionization in siliconJ. Appl. Phys., vol. 57, pp. 302-309, Jan. 1985.
-
J. Appl. Phys., Vol. 57, Pp. 302-309, Jan. 1985.
-
-
Chang, C.1
Hu, C.2
Brodersen, R.W.3
-
14
-
-
33749889238
-
A simple, cost effective, and very sensitive alternative for photon emission spectroscopy
-
M. Rasras et al., A simple, cost effective, and very sensitive alternative for photon emission spectroscopyin Proc. 23th Int. Symp. Tes. Fail. Anal. Symp., 1997, pp. 153-157.
-
In Proc. 23th Int. Symp. Tes. Fail. Anal. Symp., 1997, Pp. 153-157.
-
-
Rasras, M.1
-
15
-
-
36449003773
-
Model for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel met al.oxide-semiconductor field-effect transistors
-
K. Kobayashi, A. Teramoto, M. Hirayama, and Y. FujitaModel for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel met al.oxide-semiconductor field-effect transistors,/ Appl. Phys., vol. 77, pp. 3277-3282, Apr. 1995.
-
Appl. Phys., Vol. 77, Pp. 3277-3282, Apr. 1995.
-
-
Kobayashi, K.1
Teramoto, A.2
Hirayama, M.3
Fujita, Y.4
-
16
-
-
0033185336
-
Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in mos structures under high-field stress
-
P. SamantaCalculation of the probability of hole injection from polysilicon gate into silicon dioxide in mos structures under high-field stressSolid-State Electron., vol. 43, pp. 1677-1687, Sept. 1999.
-
Solid-State Electron., Vol. 43, Pp. 1677-1687, Sept. 1999.
-
-
Samanta, P.1
-
18
-
-
0031150253
-
Light emission microscopy for thin oxide reliability analysis
-
C. Leroux, D. Blachier, O. Briere, and G. ReimboldLight emission microscopy for thin oxide reliability analysisMicroelectron. Eng., vol. 36, pp. 297-300, June 1997.
-
Microelectron. Eng., Vol. 36, Pp. 297-300, June 1997.
-
-
Leroux, C.1
Blachier, D.2
Briere, O.3
Reimbold, G.4
-
19
-
-
0020930046
-
2
-
2in Insulating Films on Semiconductors, ser. Microelectronic Engineering, O. Engström, Ed. Amsterdam, The Netherlands: Elsevier, 1983, pp. 134-140.
-
In Insulating Films on Semiconductors, Ser. Microelectronic Engineering, O. Engström, Ed. Amsterdam, the Netherlands: Elsevier, 1983, Pp. 134-140.
-
-
Theis, T.N.1
Kirthy, R.R.2
Dimaria, D.J.3
Dong, D.W.4
-
25
-
-
0031150228
-
Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
-
E. Cartier, J. S. Tsang, M. V. Fischetti, and D. A. BuchananLight emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctionsin Insulating Films on Semiconductors, O. Engström, Ed. Amsterdam, The Netherlands: Elsevier, 1997, pp. 103-106.
-
In Insulating Films on Semiconductors, O. Engström, Ed. Amsterdam, the Netherlands: Elsevier, 1997, Pp. 103-106.
-
-
Cartier, E.1
Tsang, J.S.2
Fischetti, M.V.3
Buchanan, D.A.4
-
26
-
-
85047698016
-
Modeling of the hole current caused by Fowler-Nordheim tunneling through thin films
-
G. Hemink, T. Endoh, and R. ShirotaModeling of the hole current caused by Fowler-Nordheim tunneling through thin filmsJpn. J. Appl. Phys., vol. 33, pp. 546-549, Jan. 1994.
-
Jpn. J. Appl. Phys., Vol. 33, Pp. 546-549, Jan. 1994.
-
-
Hemink, G.1
Endoh, T.2
Shirota, R.3
-
27
-
-
84941504025
-
Electrical breakdown in thin gate and tunneling oxide
-
I. H. Chen, S. E. Holland, and C. HuElectrical breakdown in thin gate and tunneling oxideIEEE Trans. Electron Devices, vol. ED-32, pp. 41322, Feb. 1985.
-
IEEE Trans. Electron Devices, Vol. ED-32, Pp. 41322, Feb. 1985.
-
-
Chen, I.H.1
Holland, S.E.2
Hu, C.3
|