Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 103-106

  Cartier, E ^a   Tsang, J C ^a   Fischetti, M V ^a   Buchanan, D A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; HOT CARRIERS; LIGHT EMISSION; LIGHT MEASUREMENT; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES; COMPUTATIONAL METHODS; MOS DEVICES; ULTRATHIN FILMS;

CONDUCTION BAND TRANSITIONS; FOWLER-NORDHEIM TUNNELING; ULTRATHIN MOS TUNNEL JUNCTIONS; DIRECT TUNNELING; FOWLER NORDHEIM TUNNELING;

MOSFET DEVICES; TUNNEL JUNCTIONS;

EID: 0031150228     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00025-7     Document Type: Article

References (4)

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3. J. Bude, Phys. Rev B 45 (1992) 5848.
4. D.J. DiMaria, E. Cartier and D.A. Buchanan, J. Appl. Phys. 80 (1996) 304.