Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1677-1687

  Samanta, Piyas ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); IMPACT IONIZATION; PROBABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA; STRESSES;

FOWLER-NORDHEIM STRESS; HOLE INJECTION;

MOSFET DEVICES;

EID: 0033185336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00144-6     Document Type: Article

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