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Volumn 67, Issue 12, 1990, Pages 7595-7601

Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes

(3) Schwerin, A V a Heyns, M M a Weber, W b

a IMEC (Belgium)

b SIEMENS AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001193103 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.345827 Document Type: Article

Times cited : (72)

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