Light emission microscopy for thin oxide reliability analysis

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 297-300

  Leroux, Charles ^a   Blachier, Denis ^a   Briere, Olivier ^b,c   Reimbold, Gilles ^a  

^a CEA LETI   (France)

^b ORANGE LABS   (France)

^c Matra MHS TEMIC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LIGHT EMISSION; OXIDES; PHOTONS; RELIABILITY; SILICA; OPTICAL MICROSCOPY;

THIN GATE OXIDE; FOWLER-NORDHEIM CURRENT DENSITIES; LIGHT EMISSION MICROSCOPY; ULTRA THIN OXIDES;

OPTICAL MICROSCOPY; GATES (TRANSISTOR);

EID: 0031150253     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00066-X     Document Type: Article

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