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Volumn 49, Issue 15, 1994, Pages 10278-10297

Theory of high-field electron transport and impact ionization in silicon dioxide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000635723     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.49.10278     Document Type: Article
Times cited : (268)

References (98)
  • 10
    • 84926947533 scopus 로고    scopus 로고
    • P. M. Solomon, in The Physics of SiO2 and its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1986), p. 35.
  • 26
    • 84926909357 scopus 로고    scopus 로고
    • D. K. Ferry, in The Physics and Technology of Amorphous Silicon Dioxide, edited by Roderick A. B. Devine (Plenum, New York, 1988), p. 365.
  • 44
    • 84926928514 scopus 로고    scopus 로고
    • J. Maserjian, in The Physics and Chemistry of SiO2 and the SiO2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 497.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.