Emission Mechanism and Bias-Dependent Emission Efficiency of Photons Induced by Drain Avalanche in Si MOSFET’s

IEEE Transactions on Electron Devices

Volumn 32, Issue 2, 1985, Pages 405-412

  Tsuchiya, Toshiaki ^a   Nakajima, Shigeru ^b  

^a Telephone Public Corporation ^*  (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008452633     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21956     Document Type: Article

References (19)

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