Progress in gallium nitride-based bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 125-130

  Xing, H ^a   Green, D S ^a   McCarthy, L ^a   Smorchkova, I P ^a   Chavarkar, P ^a   Mates, T ^a   Keller, S ^a   DenBaars, S ^a   Speck, J ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CHEMICAL BONDS; FLUORESCENT LAMPS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; POWER AMPLIFIERS; SEMICONDUCTOR MATERIALS; ULTRAVIOLET SPECTROSCOPY;

HALIDE VAPOR PHASE EPITAXY (HVPE); OPTOELECTRONIC SPECTRUM; SEMICONDUCTOR CRYSTALS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035172381     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (30)

1. Monte Carlo simulation of electron transport in gallium nitride
2. Microwave performance of a 0.25 mu m gate AlGaN/GaN heterostructure field effect transistor
3. Approach for AlGaN/GaN HEMT power amplifiers
4. A 50-W AlGaN/GaN HEMT amplifier
5. A study on strong memory effects for Mg doping in GaN metalorganic chemical vapour deposition
6. Heavy doping effects in Mg-doped GaN
7. Implantation and dry etching of group-III-nitride semiconductors
8. A first look at AlGaN/GaN HBTs
9. AlGaN/GaN HBTs using regrown emitter
10. High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage
11. High current gain GaN bipolar junction transistors with regrown emitters
12. HBT on LEO GaN
13. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
14. High current, common-base GaN/AlGaN heterojunction bipolar transistors
15. Npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown c-doped GaAs in the base regions
16. Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors
17. The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapour deposition
18. GaN/AlGaN HBT fabrication
19. Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapour deposition
20. Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
21. Regrown emitter AlGaN-GaN pnp HBTs
22. High current gains obtained by lnGaN/GaN double heterojunction bipolar transistors with p-lnGaN base
23. AlGaN/GaN heterojunction bipolar transistor
24. GaN HBT: Toward an RF device
25. Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
26. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
27. Depletion region effects in Mg-doped GaN
28. GaN electronics