Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 22, Issue 4, 2001, Pages 157-159

  Huang, J J ^a,b   Hattendorf, Michael ^b   Feng, Milton ^a,b   Lambert, D J H ^c   Shelton, B S ^a,c   Wong, M M ^c   Chowdhury, U ^c   Zhu, T G ^c   Kwon, H K ^c   Dupuis, R D ^a,c  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

Common emitter current gain; Heterojunction bipolar transistor; Offset voltage

Indexed keywords

COLLECTOR-EMITTER OFFSET VOLTAGE; COMMON EMITTER CURRENT GAIN;

ELECTRIC CHARGE; ELECTRIC POTENTIAL; GAIN MEASUREMENT; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035310236     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915594     Document Type: Article

References (9)

1. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET
2. max of 107 GHz
3. Microwave noise performance of AlGaN/GaN HEMTs
4. Graded-emitter AlGaN/GaN Heterojunction bipolar transistors
5. AlGaN/GaN heterojunction bipolar transistor
6. AlGaN/GaN HBT's using regrown emitter
7. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
8. 1-x As base