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Volumn , Issue 2, 2001, Pages 53-68

Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FABRICATION; HIGH TEMPERATURE APPLICATIONS; MICROELECTROMECHANICAL DEVICES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

EID: 0034927050     PISSN: 00353248     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (60)
  • 4
    • 0001079678 scopus 로고    scopus 로고
    • Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits
    • IEEE Press, Ed. R. Kirschman
    • (1998) High-temperature electronics , pp. 303-308
    • Flandre, D.1
  • 5
    • 0004537863 scopus 로고    scopus 로고
  • 8
    • 0026415990 scopus 로고
    • Problems in designing thin-film accumulation-mode p-channel SOI MOSFET's for CMOS digital circuit environment
    • (1991) Electronics Letters , vol.27 , pp. 1280-1282
    • Flandre, D.1
  • 12
    • 0002832328 scopus 로고    scopus 로고
    • Low frequency noise measurements at elevated temperatures on thin-film SOI n-MOSFET
    • Bordeaux, France, septembre
    • (1998) th ESSDERC , pp. 604-607
    • Dessard, V.1    Flandre, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.