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Volumn 46, Issue 1-3, 1997, Pages 1-7

Fully depleted SOI-CMOS technology for high temperature IC applications

Author keywords

High temperature operation; Integrated circuits; MOS devices; Silicon on insulator

Indexed keywords

CMOS INTEGRATED CIRCUITS; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; OPERATIONAL AMPLIFIERS; THIN FILM DEVICES; TRANSCONDUCTANCE;

EID: 0031118312     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01921-6     Document Type: Article
Times cited : (20)

References (10)
  • 1
    • 0041765517 scopus 로고
    • SOI devices and circuits: An overview of potentials and problems
    • Kluwer Academic, The Netherlands
    • J.-P. Colinge, SOI devices and circuits: an overview of potentials and problems, in Physical and Technical Problems of SOI Structures and Devices, Kluwer Academic, The Netherlands, 1995, pp. 255-274.
    • (1995) Physical and Technical Problems of SOI Structures and Devices , pp. 255-274
    • Colinge, J.-P.1
  • 2
    • 0030127650 scopus 로고    scopus 로고
    • Modelling and application of fully depleted SOI MOSFETs for low-voltage, low-power analogue CMOS circuits
    • D. Flandre, L.F. Ferreira, P.G.A. Jespers and J.-P. Colinge, Modelling and application of fully depleted SOI MOSFETs for low-voltage, low-power analogue CMOS circuits, Solid State Electron., 39 (4) (1996) 455-460.
    • (1996) Solid State Electron. , vol.39 , Issue.4 , pp. 455-460
    • Flandre, D.1    Ferreira, L.F.2    Jespers, P.G.A.3    Colinge, J.-P.4
  • 4
    • 0043268595 scopus 로고
    • Current status of SOI technology for high temperature smart power applications
    • I.C.G. Publishing Ltd
    • J. Korec, Current status of SOI technology for high temperature smart power applications, Semiconductor Fabtech, No. 2, I.C.G. Publishing Ltd, 1995, pp. 261-239.
    • (1995) Semiconductor Fabtech , vol.2 , pp. 261-1239
    • Korec, J.1
  • 5
    • 0029185370 scopus 로고
    • Silicon-On-Insulator technology for high temperature Metal Oxide Semiconductor devices and circuits
    • D. Flandre, Silicon-On-Insulator technology for high temperature Metal Oxide Semiconductor devices and circuits, Mater. Sci. Eng., B29 (1995) 7-12.
    • (1995) Mater. Sci. Eng. , vol.B29 , pp. 7-12
    • Flandre, D.1
  • 6
    • 0024716139 scopus 로고
    • Analytical and Experimental Methods for Zero-Temperature-Coefficient Biasing of MOS Transistors
    • F.S. Shoucair, Analytical and Experimental Methods for Zero-Temperature-Coefficient Biasing of MOS Transistors, Electron. Lett., 25(1989) 1196-1198.
    • (1989) Electron. Lett. , vol.25 , pp. 1196-1198
    • Shoucair, F.S.1
  • 10
    • 0029342165 scopus 로고
    • An analytical MOS transistor model valid for all regions of operation and dedicated to low-voltage low-current applications
    • C.C, Enz, F. Krummenacher and E.A.Vittoz, An analytical MOS transistor model valid for all regions of operation and dedicated to low-voltage low-current applications, Analog Integrated Circuits and Signal Processing, 8 (1) (1995) 83-114.
    • (1995) Analog Integrated Circuits and Signal Processing , vol.8 , Issue.1 , pp. 83-114
    • Enz, C.C.1    Krummenacher, F.2    Vittoz, E.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.