6.8 GHz monolithic oscillator fabricated by 0.35 μm CMOS technologies

Electronics Letters

Volumn 36, Issue 23, 2000, Pages 1927-1928

  Hsiao, C C ^a   Kuo, C W ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; MIM DEVICES; RESONANT CIRCUITS;

MONOLITHIC OSCILLATOR CIRCUITS;

OSCILLATORS (ELECTRONIC);

EID: 0034321355     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001298     Document Type: Article

References (4)

1. GARY, P., and MEYER, R.: 'Future directions of silicon ICs for personal communications'. Proc. Custom Integrated Circuits Conf., 1995, pp. 83-90
2. CHENG, Y., CHAN, M., HUI, K., JENG, M.C., LIU, Z., HUANG, J., CHEN, K., CHAN, J., TU, R., KO, P.K., and HU, C.: 'BSIM3v3 manual'. Department of Electrical Engineering and Computer Science, University of California, 1996
3. LIU, W., GHARPUREY, R., CHANG, M.C., ERDOGAN, U., AGGARWAL, R., and MATTA, J.P.: 'R.F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model'. IEDM Tech. Digest, 1997, pp. 309-312
4. HAJIMIRI, A., and LEE, T.H.: 'Design issues in CMOS differential LC oscillators', IEEE J. Solid-State Circuits, 1999, 34, pp. 717-724