MEEF management and the effect of assist feature optical proximity corrections

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 180-187

  Reilly, M ^a   Parker, C ^a   Robertson, S ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

Assist features; Bias; Mask error factor; MEEF management; OPC; Process latitude

Indexed keywords

COMPUTER SIMULATION; IMAGE QUALITY; LITHOGRAPHY; PHASE SHIFT; SCATTERING;

OPTICAL PROXIMITY CORRECTIONS (OPC);

MASKS;

EID: 0034845990     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425205     Document Type: Conference Paper

References (17)

1. Pattern transfer at k1=0.5: Get 0.25 μm lithography ready for manufacturing
2. The mask error factor: Causes and implications for process latitude
3. MEEF measurement and model verification for 0.3 k1 lithography
4. Mask linearity and the mask error enhancement factor
5. Optically induced mask critical dimension error magnification in 248 nm lithography
6. A practical technology path to sub-0.10 μm process generations via enhanced optical lithography
7. Impact of resist on the mask error enhancement factor
8. Comparison of OPC roles and common process windows for 130nm features using binary and attenuated phase shift masks
9. Lithography process optimization for 130nm poly gate mask and the impact of mask error factor
10. The MEEF shall inherit the earth
11. The effects of mask error factor on process window capability
12. Beneath the MEEF
13. Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering bar optical proximity correction