Optically induced mask critical dimension error magnification in 248 nm lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3606-3611

  Randall, John N ^a,c   Tritchkov, Alexander ^b  

^a TEXAS INSTRUMENTS   (United States)

^b IMEC   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001698679     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590313     Document Type: Article

References (5)

1. W. Mauer, Proc. SPIE 2884, 562 (1996).
2. A. K. Wong, R. A. Ferguson, L. W. Liebmann, S. M. Mansfield, A. F. Molless, and M. O. Neisser, "Lithographic effects of mask critical dimension error," Presented at SPIE Microlithography Conference, Santa Clara, CA, 1998.
3. S. Nakao, A. Nakae, K. Tsujita, and Y. Matsui, Proc. SPIE 3051, 77 (1997).
4. J. Randall, A. Tritchkov, K. Ronse, and P. Jaenen, Microelectron. Eng. 83 (1998).
5. J. Randall, A. Tritchkov, K. Ronse, and P. Jaenen, "Reduction of mask-induced CD errors by optical proximity correction" presented at SPIE Microlithography Conference, Santa Clara, CA, 1998.