Residual stress in silicon films deposited by LPCVD from disilane

Thin Solid Films

Volumn 310, Issue 1-2, 1997, Pages 234-237

  Temple Boyer, P ^a   Scheid, E ^a   Faugere, G ^a   Rousset, B ^a  

^a LAAS CNRS   (France)

Author keywords

Crystallization; Silicon; Stress

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; HYDROGENATION; RESIDUAL STRESSES; SILANES; THERMAL STRESS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

AMORPHOUS FILMS;

EID: 0031274278     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00387-8     Document Type: Article

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