Comprehensive study of processing parameters influencing the stress and stress gradient of thick polysilicon layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3223, Issue , 1997, Pages 130-141

  Furtsch, Matthias ^a   Offenberg, Michael ^a   Muenzel, Horst ^a   Morante, Juan R ^b  

^a ROBERT BOSCH GMBH   (Germany)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Annealing; Epipoly; Oxygen; Partial pressure; Polysilicon; Stress; Stress gradient; Texture

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; COMPOSITE MICROMECHANICS; COMPRESSIVE STRESS; EPITAXIAL LAYERS; MACHINING; MECHANICAL PROPERTIES; MICROANALYSIS; MICROFABRICATION; MICROMACHINING; NONMETALS; OXYGEN; PHOSPHORUS; POLYSILICON; TENSILE STRESS; TEXTURES;

ANNEALING TEMPERATURES; APPLICATIONS.; COMPREHENSIVE STUDIES; DEPOSITION PARAMETERS; EPIPOLY; EPITAXIAL PROCESSES; EPITAXIAL REACTORS; MECHANICAL EFFECTS; MODEL-BASED; NITROGEN AMBIENT; OXYGEN ATOMS; PARTIAL PRESSURE OF OXYGENS; POLYSILICON LAYERS; PROCESSING PARAMETERS; SEED LAYERS; STRESS GRADIENT; STRESS PROFILES; SUBSEQUENT ANNEALING; VARIATIONS OF;

STRESSES;

EID: 33751128673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284473     Document Type: Conference Paper

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